Технічний опис 15KPA110CA-B Littelfuse
Description: TVS DIODE 110VWM 178.6VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 84.5A, Voltage - Reverse Standoff (Typ): 110V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 122.9V, Voltage - Clamping (Max) @ Ipp: 178.6V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 15KPA110CA-B
| Фото | Назва | Виробник | Інформація |
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15KPA110CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 128.7V; 84.5A; bidirectional; ±5%; P600; 15kW; bulk Mounting: THT Case: P600 Tolerance: ±5% Kind of package: bulk Breakdown voltage: 128.7V Max. forward impulse current: 84.5A Peak pulse power dissipation: 15kW Features of semiconductor devices: glass passivated Max. off-state voltage: 110V Semiconductor structure: bidirectional Leakage current: 2µA Type of diode: TVS кількість в упаковці: 1 шт |
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15KPA110CA-B | Виробник : Littelfuse |
TVS Diode Single Bi-Dir 110V 15KW 2-Pin Case P-600 Bulk |
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15KPA110CA-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 110VWM 178.6VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 122.9V Voltage - Clamping (Max) @ Ipp: 178.6V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
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15KPA110CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 128.7V; 84.5A; bidirectional; ±5%; P600; 15kW; bulk Mounting: THT Case: P600 Tolerance: ±5% Kind of package: bulk Breakdown voltage: 128.7V Max. forward impulse current: 84.5A Peak pulse power dissipation: 15kW Features of semiconductor devices: glass passivated Max. off-state voltage: 110V Semiconductor structure: bidirectional Leakage current: 2µA Type of diode: TVS |
товар відсутній |