Технічний опис 1N1184AR GeneSiC Semiconductor
Description: DIODE GEN PURP REV 100V 40A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 40A, Supplier Device Package: DO-5, Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Інші пропозиції 1N1184AR
| Фото | Назва | Виробник | Інформація |
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1N1184AR | Виробник : Microchip Technology |
 Diode Switching 100V 40A 2-Pin DO-5 Tray |
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1N1184AR | Виробник : Microchip Technology |
Diode Switching 100V 40A 2-Pin DO-5 Tray |
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| 1N1184AR | Виробник : Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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1N1184AR | Виробник : GeneSiC Semiconductor |
Description: DIODE GEN PURP REV 100V 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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1N1184AR | Виробник : GeneSiC Semiconductor |
Rectifiers 100V 40A REV Leads Std. Recovery |
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1N1184AR | Виробник : Microchip Technology |
Rectifiers Rectifier |
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