1N4148,113 NXP
Виробник: NXPDescription: NXP - 1N4148,113 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 1715919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32051+ | 1.11 грн |
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Технічний опис 1N4148,113 NXP
Description: DIODE GEN PURP 100V 200MA ALF2, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: ALF2, Operating Temperature - Junction: 200°C (Max), Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 25 nA @ 20 V.
Інші пропозиції 1N4148,113 за ціною від 1.32 грн до 1.32 грн
| Фото | Назва | Виробник | Інформація |
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1N4148,113 | Виробник : NXP USA Inc. |
Description: DIODE GEN PURP 100V 200MA ALF2 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ALF2 Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
на замовлення 1740769 шт: термін постачання 21-31 дні (днів) |
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1N4148,113 | Виробник : NXP USA Inc. |
Description: DIODE GEN PURP 100V 200MA ALF2 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ALF2 Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
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1N4148,113 | Виробник : NXP USA Inc. |
Description: DIODE GEN PURP 100V 200MA ALF2 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: ALF2 Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V |
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1N4148,113 | Виробник : Nexperia |
Diodes - General Purpose, Power, Switching 100V, 200mA Hi Speed Diode |
товар відсутній |