Результат пошуку "1N4150-DIO" : 3
Вид перегляду :
Мінімальне замовлення: 200
Мінімальне замовлення: 125
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1N4150 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 50V Load current: 0.3A Max. load current: 0.6A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1.2V Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 3325 шт: термін постачання 21-30 дні (днів) |
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1N4150 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 50V Load current: 0.3A Max. load current: 0.6A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1.2V Power dissipation: 0.5W Reverse recovery time: 4ns кількість в упаковці: 25 шт |
на замовлення 3325 шт: термін постачання 7-14 дні (днів) |
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1N4150 |
Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 50V
Load current: 0.3A
Max. load current: 0.6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.2V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 50V
Load current: 0.3A
Max. load current: 0.6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.2V
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 3325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 1.98 грн |
450+ | 0.77 грн |
1000+ | 0.63 грн |
1475+ | 0.54 грн |
1N4150 |
Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 50V
Load current: 0.3A
Max. load current: 0.6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.2V
Power dissipation: 0.5W
Reverse recovery time: 4ns
кількість в упаковці: 25 шт
Category: THT universal diodes
Description: Diode: switching; THT; 50V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 50V
Load current: 0.3A
Max. load current: 0.6A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1.2V
Power dissipation: 0.5W
Reverse recovery time: 4ns
кількість в упаковці: 25 шт
на замовлення 3325 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 2.37 грн |
275+ | 0.96 грн |
1000+ | 0.76 грн |
1475+ | 0.65 грн |
4050+ | 0.62 грн |