Результат пошуку "1N5059 diod 200V 2A" : 11
Вид перегляду :
Мінімальне замовлення: 150
Мінімальне замовлення: 1000
Мінімальне замовлення: 31
Мінімальне замовлення: 5000
Мінімальне замовлення: 8
Мінімальне замовлення: 9
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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1N5059 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Max. load current: 10A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 50A Case: DO41 Max. forward voltage: 1.1V Reverse recovery time: 1.5µs |
на замовлення 4525 шт: термін постачання 21-30 дні (днів) |
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1N5059 | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 2A DO15 Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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1N5059 | Diotec Semiconductor | Rectifiers Diode, DO-15, 200V, 2A |
на замовлення 10330 шт: термін постачання 21-30 дні (днів) |
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1N5059TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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1N5059TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 43439 шт: термін постачання 21-31 дні (днів) |
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1N5059TR | Vishay Semiconductors | Rectifiers DIODE 2A 200V |
на замовлення 25766 шт: термін постачання 21-30 дні (днів) |
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1N5059 | Diotec Semiconductor |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товар відсутній |
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1N5059TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.15V Leakage current: 0.1mA Reverse recovery time: 4µs |
товар відсутній |
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1N5059TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товар відсутній |
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1N5059TAP | Vishay Semiconductors | Rectifiers 2.0 Amp 200 Volt |
товар відсутній |
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1N5059TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Kind of package: reel; tape Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.15V Leakage current: 0.1mA Reverse recovery time: 4µs |
товар відсутній |
1N5059 |
Виробник: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; DO41; 1.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. load current: 10A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: DO41
Max. forward voltage: 1.1V
Reverse recovery time: 1.5µs
на замовлення 4525 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
150+ | 2.61 грн |
200+ | 1.82 грн |
750+ | 1.1 грн |
2025+ | 1.04 грн |
1N5059 |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 14.79 грн |
2000+ | 8.42 грн |
4000+ | 4.86 грн |
8000+ | 3.41 грн |
16000+ | 2.84 грн |
1N5059 |
Виробник: Diotec Semiconductor
Rectifiers Diode, DO-15, 200V, 2A
Rectifiers Diode, DO-15, 200V, 2A
на замовлення 10330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 10.13 грн |
42+ | 7.45 грн |
100+ | 5.41 грн |
500+ | 4.27 грн |
1000+ | 3.81 грн |
4000+ | 2.87 грн |
8000+ | 1.87 грн |
1N5059TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 12.62 грн |
10000+ | 11.29 грн |
25000+ | 11.02 грн |
1N5059TR |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 43439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39 грн |
10+ | 32.48 грн |
100+ | 22.57 грн |
500+ | 16.54 грн |
1000+ | 13.44 грн |
2000+ | 12.02 грн |
1N5059TR |
Виробник: Vishay Semiconductors
Rectifiers DIODE 2A 200V
Rectifiers DIODE 2A 200V
на замовлення 25766 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.52 грн |
11+ | 30.17 грн |
100+ | 18.96 грн |
500+ | 15.69 грн |
1000+ | 12.22 грн |
2500+ | 11.82 грн |
1N5059 |
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N5059TAP |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
товар відсутній
1N5059TAP |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
1N5059TR |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 50A; SOD57; 4us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Capacitance: 40pF
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.15V
Leakage current: 0.1mA
Reverse recovery time: 4µs
товар відсутній