1N5061 TR PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: DIODE GEN PURP 600V 1A GPR-1A
Packaging: Cut Tape (CT)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Технічний опис 1N5061 TR PBFREE Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A GPR-1A, Packaging: Tape & Reel (TR), Package / Case: R-1, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: GPR-1A, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Інші пропозиції 1N5061 TR PBFREE
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1N5061 TR PBFREE | Виробник : Central Semiconductor Corp |
Description: DIODE GEN PURP 600V 1A GPR-1A Packaging: Tape & Reel (TR) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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1N5061 TR PBFREE | Виробник : Central Semiconductor |
Rectifiers 1.0A 400V |
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