Технічний опис 1N5190/TR Microchip Technology
Description: DIODE FAST RECOVERY TH, Packaging: Tape & Box (TB), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA, Current - Reverse Leakage @ Vr: 2 µA @ 600 V.
Інші пропозиції 1N5190/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
1N5190/TR | Виробник : Microchip Technology |
 Description: DIODE GEN PURP 600V 3APackaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
товар відсутній |
|
| 1N5190 TR | Виробник : Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 600 V |
товар відсутній |
||
 |
1N5190/TR | Виробник : Microchip Technology |
Rectifiers UFR,FRR |
товар відсутній |