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1N5401G 1N5401G YANGJIE TECHNOLOGY 1N5400G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
товар відсутній
1N5401G 1N5401G YANGJIE TECHNOLOGY 1N5400G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
товар відсутній
1N5401G 1N5400G_SER.pdf
1N5401G
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
товар відсутній
1N5401G 1N5400G_SER.pdf
1N5401G
Виробник: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
товар відсутній