1N6483-E3/96 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 8.43 грн |
3000+ | 7.48 грн |
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Технічний опис 1N6483-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції 1N6483-E3/96 за ціною від 9.76 грн до 31.47 грн
Фото | Назва | Виробник | Інформація |
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1N6483-E3/96 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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1N6483-E3/96 | Виробник : Vishay General Semiconductor | Rectifiers 1.0 Amp 800 Volt |
на замовлення 18279 шт: термін постачання 21-30 дні (днів) |
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1N6483-E3/96 | Виробник : Vishay | Diode Switching 800V 1A 2-Pin DO-213AB T/R |
товар відсутній |
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1N6483-E3/96 | Виробник : Vishay | Diode Switching 800V 1A 2-Pin DO-213AB T/R |
товар відсутній |
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1N6483-E3/96 | Виробник : Vishay | Diode Switching 800V 1A 2-Pin DO-213AB T/R |
товар відсутній |
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1N6483-E3/96 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; DO213AB; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO213AB Max. forward voltage: 1V Leakage current: 0.2mA кількість в упаковці: 1 шт |
товар відсутній |
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1N6483-E3/96 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; DO213AB; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO213AB Max. forward voltage: 1V Leakage current: 0.2mA |
товар відсутній |