Технічний опис 1SS361(TE85L,F) Toshiba
Category: SMD universal diodes, Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A, Type of diode: switching, Mounting: SMD, Max. off-state voltage: 85V, Load current: 0.1A, Max. load current: 0.3A, Reverse recovery time: 4ns, Semiconductor structure: common cathode; double, Features of semiconductor devices: ultrafast switching, Capacitance: 3pF, Max. forward voltage: 1.2V, Case: SOT416, Kind of package: reel; tape, Max. forward impulse current: 2A, Power dissipation: 0.1W, кількість в упаковці: 5 шт.
Інші пропозиції 1SS361(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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1SS361(TE85L,F) | Виробник : TOSHIBA |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT416 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.1W кількість в упаковці: 5 шт |
товар відсутній |
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1SS361(TE85L,F) | Виробник : TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT416; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 3pF Max. forward voltage: 1.2V Case: SOT416 Kind of package: reel; tape Max. forward impulse current: 2A Power dissipation: 0.1W |
товар відсутній |