Результат пошуку "20KPA112A-LF" : 3
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
20KPA112A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape Type of diode: TVS Peak pulse power dissipation: 20kW Max. off-state voltage: 112V Breakdown voltage: 131.4V Max. forward impulse current: 111A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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20KPA112A | LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape Type of diode: TVS Peak pulse power dissipation: 20kW Max. off-state voltage: 112V Breakdown voltage: 131.4V Max. forward impulse current: 111A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 800 шт |
товар відсутній |
20KPA112A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 20kW
Max. off-state voltage: 112V
Breakdown voltage: 131.4V
Max. forward impulse current: 111A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 20kW
Max. off-state voltage: 112V
Breakdown voltage: 131.4V
Max. forward impulse current: 111A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
20KPA112A |
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 20kW
Max. off-state voltage: 112V
Breakdown voltage: 131.4V
Max. forward impulse current: 111A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 20kW; 131.4V; 111A; unidirectional; ±5%; P600; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 20kW
Max. off-state voltage: 112V
Breakdown voltage: 131.4V
Max. forward impulse current: 111A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
товар відсутній