20KPA180A MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE UP 180VRWM 291VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.4A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 291V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 807.22 грн |
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Технічний опис 20KPA180A MDE Semiconductor Inc
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 20kW; 211.2V; 69.4A; unidirectional; ±5%; P600, Type of diode: TVS, Peak pulse power dissipation: 20kW, Max. off-state voltage: 180V, Breakdown voltage: 211.2V, Max. forward impulse current: 69.4A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, кількість в упаковці: 800 шт.
Інші пропозиції 20KPA180A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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20KPA180A | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 211.2V; 69.4A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 20kW Max. off-state voltage: 180V Breakdown voltage: 211.2V Max. forward impulse current: 69.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 800 шт |
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20KPA180A | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode |
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20KPA180A | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 20kW; 211.2V; 69.4A; unidirectional; ±5%; P600 Type of diode: TVS Peak pulse power dissipation: 20kW Max. off-state voltage: 180V Breakdown voltage: 211.2V Max. forward impulse current: 69.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |