20KPA32CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE UP 32VRWM 54.3VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 372A
Voltage - Reverse Standoff (Typ): 32V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.74V
Voltage - Clamping (Max) @ Ipp: 54.3V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 755.27 грн |
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Технічний опис 20KPA32CA MDE Semiconductor Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; reel,tape, Mounting: THT, Peak pulse power dissipation: 20kW, Tolerance: ±5%, Max. off-state voltage: 32V, Semiconductor structure: bidirectional, Max. forward impulse current: 372A, Breakdown voltage: 37.5V, Leakage current: 0.3mA, Kind of package: reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Case: P600, кількість в упаковці: 800 шт.
Інші пропозиції 20KPA32CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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20KPA32CA | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; reel,tape Mounting: THT Peak pulse power dissipation: 20kW Tolerance: ±5% Max. off-state voltage: 32V Semiconductor structure: bidirectional Max. forward impulse current: 372A Breakdown voltage: 37.5V Leakage current: 0.3mA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Case: P600 кількість в упаковці: 800 шт |
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20KPA32CA | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode |
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20KPA32CA | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; reel,tape Mounting: THT Peak pulse power dissipation: 20kW Tolerance: ±5% Max. off-state voltage: 32V Semiconductor structure: bidirectional Max. forward impulse current: 372A Breakdown voltage: 37.5V Leakage current: 0.3mA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Case: P600 |
товар відсутній |