2N4123TAR

2N4123TAR ON Semiconductor


5880673845526852n4123.pdf Виробник: ON Semiconductor
Trans GP BJT NPN 30V 0.2A 3-Pin TO-92 Ammo
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Технічний опис 2N4123TAR ON Semiconductor

Description: TRANS NPN 30V 0.2A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 625 mW.

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2N4123TAR 2N4123TAR Виробник : onsemi 2N4123.pdf Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній