2N7002ET3G ON Semiconductor

Description: MOSFET N-CH 60V 260MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V, Power Dissipation (Max): 300mW (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 26.7 pF @ 25 V.