2PD602AR,115

2PD602AR,115 NXP USA Inc.


2PD602A_4.pdf Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Frequency - Transition: 160MHz
Supplier Device Package: SMT3; MPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис 2PD602AR,115 NXP USA Inc.

Description: TRANS NPN 50V 0.5A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V, Frequency - Transition: 160MHz, Supplier Device Package: SMT3; MPAK, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW.