2SA1013-O,T6MIBF(J Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS PNP 160V 1A TO92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
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Технічний опис 2SA1013-O,T6MIBF(J Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1A TO92L, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92L, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.