2SA1190DTZ-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 400 mW
на замовлення 110472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1475+ | 13.16 грн |
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Технічний опис 2SA1190DTZ-E Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V, Frequency - Transition: 130MHz, Supplier Device Package: TO-92, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 90 V, Power - Max: 400 mW.