2SB1032K-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-3P
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 80 W
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 91+ | 221.51 грн |
Відгуки про товар
Написати відгук
Технічний опис 2SB1032K-E Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V, Supplier Device Package: TO-3P, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 80 W.