2SB1150-AZ Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1.3 W
на замовлення 4317 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 406+ | 49.22 грн |
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Технічний опис 2SB1150-AZ Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1.5mA, 1.5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 2V, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 70 V, Power - Max: 1.3 W.