2SK1292(02)-S6-AZ Renesas Electronics Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Isolated Tab, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: MP-45F, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V.