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2N5308_D75Z

2N5308_D75Z onsemi


2N5308.pdf Виробник: onsemi
Description: TRANS NPN DARL 40V 1.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Технічний опис 2N5308_D75Z onsemi

Description: TRANS NPN DARL 40V 1.2A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1.2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.