2SC2619FBTR-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 12V
Frequency - Transition: 230MHz
Supplier Device Package: 3-MPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1803+ | 11.22 грн |
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Технічний опис 2SC2619FBTR-E Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.1V @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 12V, Frequency - Transition: 230MHz, Supplier Device Package: 3-MPAK, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 150 mW.