2SC3361-6-TB-E-ON onsemi
Виробник: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: 3-CP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1567+ | 12.85 грн |
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Технічний опис 2SC3361-6-TB-E-ON onsemi
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: 3-CP, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.