2SD2106-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220FM
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 2 W
на замовлення 1147 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 171+ | 119.01 грн |
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Технічний опис 2SD2106-E Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 60mA, 6A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V, Supplier Device Package: TO-220FM, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 2 W.