3.0SMCJ10CA Littelfuse


media.pdf Виробник: Littelfuse
Diode TVS Single Bi-Dir 10V 3KW
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Технічний опис 3.0SMCJ10CA Littelfuse

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.5A; bidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 10V, Breakdown voltage: 11.1...12.3V, Max. forward impulse current: 176.5A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: 3.0SMCJ, кількість в упаковці: 1 шт.

Інші пропозиції 3.0SMCJ10CA

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3.0SMCJ10CA Виробник : DIOTEC SEMICONDUCTOR 30smcj50.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
3.0SMCJ10CA 3.0SMCJ10CA Виробник : LITTELFUSE 3.0SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.5A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
кількість в упаковці: 1 шт
товар відсутній
3.0SMCJ10CA 3.0SMCJ10CA Виробник : SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 10VWM 17VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 176.4A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMC (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
товар відсутній
3.0SMCJ10CA Виробник : DIOTEC SEMICONDUCTOR 30smcj50.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.3A; bidirectional; ±5%; SMC
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
3.0SMCJ10CA 3.0SMCJ10CA Виробник : LITTELFUSE 3.0SMCJ_ser.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 11.1÷12.3V; 176.5A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 176.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: 3.0SMCJ
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