30KP144CA

30KP144CA MDE Semiconductor Inc


30KP_Series.pdf Виробник: MDE Semiconductor Inc
Description: TVS DIODE BP 144VRWM 223.2VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 135.8A
Voltage - Reverse Standoff (Typ): 144V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 160.8V
Voltage - Clamping (Max) @ Ipp: 223.2V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1217.29 грн
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Технічний опис 30KP144CA MDE Semiconductor Inc

Description: TVS DIODE BP 144VRWM 223.2VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 135.8A, Voltage - Reverse Standoff (Typ): 144V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 160.8V, Voltage - Clamping (Max) @ Ipp: 223.2V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.

Інші пропозиції 30KP144CA

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
30KP144CA 30KP144CA Виробник : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
30KP144CA 30KP144CA Виробник : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній