30KP180CA MDE Semiconductor Inc
Виробник: MDE Semiconductor IncDescription: TVS DIODE BP 180VRWM 290.4VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.3A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 290.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1332.67 грн |
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Технічний опис 30KP180CA MDE Semiconductor Inc
Description: TVS DIODE BP 180VRWM 290.4VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 104.3A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 201.1V, Voltage - Clamping (Max) @ Ipp: 290.4V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Інші пропозиції 30KP180CA
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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30KP180CA | Виробник : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товар відсутній |
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30KP180CA | Виробник : CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |