30KP30A

30KP30A MDE Semiconductor Inc


30KP_Series.pdf Виробник: MDE Semiconductor Inc
Description: TVS DIODE UP 30VRWM 55.2VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 548.9A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.51V
Voltage - Clamping (Max) @ Ipp: 55.2V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1244.79 грн
Відгуки про товар
Написати відгук

Технічний опис 30KP30A MDE Semiconductor Inc

Description: TVS DIODE UP 30VRWM 55.2VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 548.9A, Voltage - Reverse Standoff (Typ): 30V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 33.51V, Voltage - Clamping (Max) @ Ipp: 55.2V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.

Інші пропозиції 30KP30A

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
30KP30A 30KP30A Виробник : CDIL 30KP_ser.PDF Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 33.5V; 548.9A; unidirectional; R6; bulk
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward impulse current: 548.9A
Case: R6
Leakage current: 5mA
Peak pulse power dissipation: 30kW
Breakdown voltage: 33.5V
кількість в упаковці: 1 шт
товар відсутній
30KP30A 30KP30A Виробник : CDIL 30KP_ser.PDF Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 33.5V; 548.9A; unidirectional; R6; bulk
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward impulse current: 548.9A
Case: R6
Leakage current: 5mA
Peak pulse power dissipation: 30kW
Breakdown voltage: 33.5V
товар відсутній