30KP51CA

30KP51CA Solid State Inc.


30KPSeries-ssi.pdf Виробник: Solid State Inc.
Description: 30KW TVS BIDIRECTIONAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 362A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
на замовлення 500 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+424.54 грн
Мінімальне замовлення: 500
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Технічний опис 30KP51CA Solid State Inc.

Description: 30KW TVS BIDIRECTIONAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 362A, Voltage - Reverse Standoff (Typ): 51V, Supplier Device Package: Axial, Bidirectional Channels: 1, Voltage - Breakdown (Min): 56.7V, Voltage - Clamping (Max) @ Ipp: 82.8V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Part Status: Active.

Інші пропозиції 30KP51CA

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
30KP51CA 30KP51CA Виробник : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 57V; 350.7A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 51V
Breakdown voltage: 57V
Max. forward impulse current: 350.7A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 50µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
30KP51CA 30KP51CA Виробник : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 57V; 350.7A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 51V
Breakdown voltage: 57V
Max. forward impulse current: 350.7A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 50µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній