Технічний опис 30KPA108A-B Littelfuse Inc.
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk, Mounting: THT, Tolerance: ±5%, Max. forward impulse current: 172.9A, Leakage current: 2µA, Case: P600, Kind of package: bulk, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 30kW, Max. off-state voltage: 108V, Semiconductor structure: unidirectional, Breakdown voltage: 126.6V, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA108A-B
| Фото | Назва | Виробник | Інформація |
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30KPA108A-B | Виробник : LITTELFUSE |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk Mounting: THT Tolerance: ±5% Max. forward impulse current: 172.9A Leakage current: 2µA Case: P600 Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Max. off-state voltage: 108V Semiconductor structure: unidirectional Breakdown voltage: 126.6V кількість в упаковці: 1 шт |
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| 30KPA108A-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA108A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 126.6V; 172.9A; unidirectional; ±5%; P600; bulk Mounting: THT Tolerance: ±5% Max. forward impulse current: 172.9A Leakage current: 2µA Case: P600 Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Max. off-state voltage: 108V Semiconductor structure: unidirectional Breakdown voltage: 126.6V |
товар відсутній |