Технічний опис 30KPA108CA-B Littelfuse Inc.
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Max. off-state voltage: 108V, Breakdown voltage: 126.6V, Max. forward impulse current: 172.9A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Peak pulse power dissipation: 30kW, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA108CA-B
| Фото | Назва | Виробник | Інформація |
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30KPA108CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA108CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA108CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 126.6V; 172.9A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 108V Breakdown voltage: 126.6V Max. forward impulse current: 172.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |