Технічний опис 30KPA150CA-B Littelfuse
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Max. off-state voltage: 150V, Breakdown voltage: 176V, Max. forward impulse current: 129.8A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Peak pulse power dissipation: 30kW, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA150CA-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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30KPA150CA-B | Виробник : Littelfuse Inc. |
 Description: TVS DIODE 150VWM 233.4VC P600 |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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30KPA150CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товар відсутній |
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30KPA150CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 176V; 129.8A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Max. off-state voltage: 150V Breakdown voltage: 176V Max. forward impulse current: 129.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |