Результат пошуку "30KPA156CA-LF" : 3
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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30KPA156CA | LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товар відсутній |
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30KPA156CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 156V Breakdown voltage: 183V Max. forward impulse current: 123.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 800 шт |
товар відсутній |
| 30KPA156CA |
|
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| 30KPA156CA |
|
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 183V; 123.7A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 156V
Breakdown voltage: 183V
Max. forward impulse current: 123.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
товар відсутній