Технічний опис 30KPA170A-B Littelfuse Inc.
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk, Type of diode: TVS, Max. off-state voltage: 170V, Breakdown voltage: 199.4V, Max. forward impulse current: 110.2A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Peak pulse power dissipation: 30kW, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA170A-B
| Фото | Назва | Виробник | Інформація |
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30KPA170A-B | Виробник : LITTELFUSE |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA170A-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS AXIAL LEAD HIGH POWER |
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30KPA170A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 199.4V; 110.2A; unidirectional; ±5%; P600; bulk Type of diode: TVS Max. off-state voltage: 170V Breakdown voltage: 199.4V Max. forward impulse current: 110.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Peak pulse power dissipation: 30kW Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |