30KPA216A-B LITTELFUSE
Виробник: LITTELFUSECategory: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 253.4V; 86.9A; unidirectional; ±5%; P600; bulk
Case: P600
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 216V
Semiconductor structure: unidirectional
Max. forward impulse current: 86.9A
Breakdown voltage: 253.4V
Leakage current: 2µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Tolerance: ±5%
кількість в упаковці: 1 шт
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Технічний опис 30KPA216A-B LITTELFUSE
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 30kW; 253.4V; 86.9A; unidirectional; ±5%; P600; bulk, Case: P600, Mounting: THT, Kind of package: bulk, Max. off-state voltage: 216V, Semiconductor structure: unidirectional, Max. forward impulse current: 86.9A, Breakdown voltage: 253.4V, Leakage current: 2µA, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 30kW, Tolerance: ±5%, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA216A-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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30KPA216A-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 216VWM 348.6VC P600 |
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| 30KPA216A-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA216A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 253.4V; 86.9A; unidirectional; ±5%; P600; bulk Case: P600 Mounting: THT Kind of package: bulk Max. off-state voltage: 216V Semiconductor structure: unidirectional Max. forward impulse current: 86.9A Breakdown voltage: 253.4V Leakage current: 2µA Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Tolerance: ±5% |
товар відсутній |