Результат пошуку "30KPA33CA-LF" : 5
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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30KPA33CA-LF | ProTek Devices |
 TVS Diode Single Bi-Dir 33V 30KW 2-Pin |
товар відсутній |
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30KPA33CA-LF | Protek Devices |
TVS Diode Single Bi-Dir 33V 30KW 2-Pin |
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30KPA33CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 38.7V Max. forward impulse current: 517.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 10mA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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30KPA33CA | LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 38.7V Max. forward impulse current: 517.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 10mA Peak pulse power dissipation: 30kW Kind of package: reel; tape Features of semiconductor devices: glass passivated кількість в упаковці: 800 шт |
товар відсутній |
| 30KPA33CA |
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Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
| 30KPA33CA |
|
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 38.7V; 517.9A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 38.7V
Max. forward impulse current: 517.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 10mA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
товар відсутній