Результат пошуку "30KPA60CA-LF" : 4

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30KPA60CA-LF ProTek Devices 60V30000W BI-DIRECTIONAL 5%
товар відсутній
30KPA60CA 30KPA60CA LITTELFUSE 30KPA-ser.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 70.4V; 297.1A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 70.4V
Max. forward impulse current: 297.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 30µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA60CA 30KPA60CA LITTELFUSE 30KPA-ser.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 70.4V; 297.1A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 70.4V
Max. forward impulse current: 297.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 30µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
товар відсутній
30KPA60CA-LF
Виробник: ProTek Devices
60V30000W BI-DIRECTIONAL 5%
товар відсутній
30KPA60CA 30KPA-ser.pdf
30KPA60CA
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 70.4V; 297.1A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 70.4V
Max. forward impulse current: 297.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 30µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
30KPA60CA 30KPA-ser.pdf
30KPA60CA
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 70.4V; 297.1A; bidirectional; ±5%; P600; 30kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 70.4V
Max. forward impulse current: 297.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 30µA
Peak pulse power dissipation: 30kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 800 шт
товар відсутній