30KPA66A-B LITTELFUSE
Виробник: LITTELFUSE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 77.4V; 283.2A; unidirectional; ±5%; P600; bulk
Kind of package: bulk
Mounting: THT
Case: P600
Features of semiconductor devices: glass passivated
Max. forward impulse current: 283.2A
Peak pulse power dissipation: 30kW
Breakdown voltage: 77.4V
Leakage current: 2µA
Semiconductor structure: unidirectional
Max. off-state voltage: 66V
Type of diode: TVS
Tolerance: ±5%
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 77.4V; 283.2A; unidirectional; ±5%; P600; bulk
Kind of package: bulk
Mounting: THT
Case: P600
Features of semiconductor devices: glass passivated
Max. forward impulse current: 283.2A
Peak pulse power dissipation: 30kW
Breakdown voltage: 77.4V
Leakage current: 2µA
Semiconductor structure: unidirectional
Max. off-state voltage: 66V
Type of diode: TVS
Tolerance: ±5%
кількість в упаковці: 1 шт
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Технічний опис 30KPA66A-B LITTELFUSE
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 30kW; 77.4V; 283.2A; unidirectional; ±5%; P600; bulk, Kind of package: bulk, Mounting: THT, Case: P600, Features of semiconductor devices: glass passivated, Max. forward impulse current: 283.2A, Peak pulse power dissipation: 30kW, Breakdown voltage: 77.4V, Leakage current: 2µA, Semiconductor structure: unidirectional, Max. off-state voltage: 66V, Type of diode: TVS, Tolerance: ±5%, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA66A-B
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
30KPA66A-B | Виробник : Littelfuse Inc. | Description: TVS DIODE 66VWM 107VC P600 |
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30KPA66A/B | Виробник : YAGEO | ESD Suppressors / TVS Diodes 30KPA P600 66V 107V |
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30KPA66A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 77.4V; 283.2A; unidirectional; ±5%; P600; bulk Kind of package: bulk Mounting: THT Case: P600 Features of semiconductor devices: glass passivated Max. forward impulse current: 283.2A Peak pulse power dissipation: 30kW Breakdown voltage: 77.4V Leakage current: 2µA Semiconductor structure: unidirectional Max. off-state voltage: 66V Type of diode: TVS Tolerance: ±5% |
товар відсутній |