3N163 TO-72 4L ROHS Linear Integrated Systems, Inc.
Виробник: Linear Integrated Systems, Inc.Description: P-CHANNEL, SINGLE ENHANCEMENT MO
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): -6.5V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
на замовлення 617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 634.84 грн |
| 10+ | 552.31 грн |
| 100+ | 457.25 грн |
| 500+ | 373.66 грн |
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Технічний опис 3N163 TO-72 4L ROHS Linear Integrated Systems, Inc.
Description: P-CHANNEL, SINGLE ENHANCEMENT MO, Packaging: Bulk, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50mA, Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V, Power Dissipation (Max): 375mW, Vgs(th) (Max) @ Id: 5V @ 10µA, Supplier Device Package: TO-72-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): -6.5V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V.