3SK263-5-TG-E onsemi
Виробник: onsemiDescription: FET RF 15V 200MHZ CP4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 21dB
Technology: MOSFET
Noise Figure: 2.2dB
Supplier Device Package: 4-CP
Part Status: Obsolete
Voltage - Rated: 15 V
Voltage - Test: 6 V
Current - Test: 10 mA
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Технічний опис 3SK263-5-TG-E onsemi
Description: FET RF 15V 200MHZ CP4, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Current Rating (Amps): 30mA, Mounting Type: Surface Mount, Frequency: 200MHz, Configuration: N-Channel Dual Gate, Gain: 21dB, Technology: MOSFET, Noise Figure: 2.2dB, Supplier Device Package: 4-CP, Part Status: Obsolete, Voltage - Rated: 15 V, Voltage - Test: 6 V, Current - Test: 10 mA.
Інші пропозиції 3SK263-5-TG-E
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3SK263-5-TG-E | Виробник : onsemi |
Description: FET RF 15V 200MHZ CP4 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 200MHz Configuration: N-Channel Dual Gate Gain: 21dB Technology: MOSFET Noise Figure: 2.2dB Supplier Device Package: 4-CP Part Status: Obsolete Voltage - Rated: 15 V Voltage - Test: 6 V Current - Test: 10 mA |
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| 3SK263-5-TG-E | Виробник : onsemi |
RF MOSFET Transistors N-Channnel Dual Gate MOSFET, 15V, 30mA, PG=21dB, NF=1.1dB, CP4 |
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