Результат пошуку "4N25-T" : 18
Вид перегляду :
Мінімальне замовлення: 3
Мінімальне замовлення: 2
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDB44N25TM | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 26.4A Power dissipation: 307W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 478 шт: термін постачання 21-30 дні (днів) |
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FDB44N25TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 26.4A Power dissipation: 307W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 478 шт: термін постачання 7-14 дні (днів) |
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| FDPF44N25T | ON Semiconductor |
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на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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| FQD4N25TM | Fairchild |
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на замовлення 2500 шт: термін постачання 14-28 дні (днів) |
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| STD4N25-TR |
на замовлення 200 шт: термін постачання 14-28 дні (днів) |
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| STD4N25T4 |
на замовлення 2522 шт: термін постачання 14-28 дні (днів) |
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4N25TVM | ON Semiconductor |
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag |
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4N25TVM | ON Semiconductor |
DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag |
товар відсутній |
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| CAT28LV64N-25T | CATALYST SEMICONDUCTOR |
Category: Obsolete Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD Case: PLCC32 Mounting: SMD Operating temperature: 0...70°C Memory: 64kb EEPROM Operating voltage: 3...3.6V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 250ns Important information: product not returnable Kind of interface: parallel |
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| CAT28LV64N-25T | CATALYST SEMICONDUCTOR |
Category: Obsolete Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD Case: PLCC32 Mounting: SMD Operating temperature: 0...70°C Memory: 64kb EEPROM Operating voltage: 3...3.6V Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 250ns Important information: product not returnable Kind of interface: parallel кількість в упаковці: 1 шт |
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FQD4N25TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 37W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced |
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FQD4N25TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 37W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQT4N25TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.66A Pulsed drain current: 3.3A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced |
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FQT4N25TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.66A Pulsed drain current: 3.3A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.75Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| FDB44N25TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 26.4A
Power dissipation: 307W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 26.4A
Power dissipation: 307W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 478 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.21 грн |
| 5+ | 113.24 грн |
| 8+ | 102.95 грн |
| 22+ | 97.46 грн |
| 100+ | 95.4 грн |
| FDB44N25TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 26.4A
Power dissipation: 307W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 26.4A
Power dissipation: 307W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 478 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.85 грн |
| 5+ | 141.11 грн |
| 8+ | 123.53 грн |
| 22+ | 116.95 грн |
| 100+ | 114.48 грн |
| 4N25TVM |
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Виробник: ON Semiconductor
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag
товар відсутній
| 4N25TVM |
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Виробник: ON Semiconductor
DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag
DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Bag
товар відсутній
| CAT28LV64N-25T |
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Виробник: CATALYST SEMICONDUCTOR
Category: Obsolete
Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD
Case: PLCC32
Mounting: SMD
Operating temperature: 0...70°C
Memory: 64kb EEPROM
Operating voltage: 3...3.6V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 250ns
Important information: product not returnable
Kind of interface: parallel
Category: Obsolete
Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD
Case: PLCC32
Mounting: SMD
Operating temperature: 0...70°C
Memory: 64kb EEPROM
Operating voltage: 3...3.6V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 250ns
Important information: product not returnable
Kind of interface: parallel
товар відсутній
| CAT28LV64N-25T |
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Виробник: CATALYST SEMICONDUCTOR
Category: Obsolete
Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD
Case: PLCC32
Mounting: SMD
Operating temperature: 0...70°C
Memory: 64kb EEPROM
Operating voltage: 3...3.6V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 250ns
Important information: product not returnable
Kind of interface: parallel
кількість в упаковці: 1 шт
Category: Obsolete
Description: IC: EEPROM memory; parallel; 64kbEEPROM; 8kx8bit; 3÷3.6V; SMD
Case: PLCC32
Mounting: SMD
Operating temperature: 0...70°C
Memory: 64kb EEPROM
Operating voltage: 3...3.6V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 250ns
Important information: product not returnable
Kind of interface: parallel
кількість в упаковці: 1 шт
товар відсутній
| FQD4N25TM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQD4N25TM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 1.9A
Pulsed drain current: 12A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FQT4N25TF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.66A
Pulsed drain current: 3.3A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.66A
Pulsed drain current: 3.3A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQT4N25TF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.66A
Pulsed drain current: 3.3A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.66A
Pulsed drain current: 3.3A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній