5.0SMDJ6.5CAS LITTELFUSE
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 7.6V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.6V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 3000 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5kW; 7.6V; 300A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.6V
Max. forward impulse current: 300A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
кількість в упаковці: 3000 шт
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Технічний опис 5.0SMDJ6.5CAS LITTELFUSE
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 5kW; 7.6V; 300A; bidirectional; ±5%; SMC; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 5kW, Max. off-state voltage: 6.5V, Breakdown voltage: 7.6V, Max. forward impulse current: 300A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMC, Mounting: SMD, Leakage current: 0.5mA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, кількість в упаковці: 3000 шт.
Інші пропозиції 5.0SMDJ6.5CAS
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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5.0SMDJ6.5CAS | Виробник : LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5kW; 7.6V; 300A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 6.5V Breakdown voltage: 7.6V Max. forward impulse current: 300A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 0.5mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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