Результат пошуку "566474" : 7
Вид перегляду :
Мінімальне замовлення: 32
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ERA6AEB222V | PANASONIC |
 Description: PANASONIC - ERA6AEB222V - Chipwiderstand, Oberflächenmontage, 2.2 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]tariffCode: 85332100 rohsCompliant: Y-EX Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012] Widerstandstechnologie: Metallfolie (Dünnschicht) hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q200 Nennleistung: 125mW Widerstandstyp: Hohe Zuverlässigkeit Widerstand: 2.2kohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: ± 0.1% Temperaturkoeffizient: ± 25ppm/°C Produktlänge: 2.01mm euEccn: NLR Produktpalette: ERA A Series productTraceability: Yes-Date/Lot Code Nennspannung: 100V Betriebstemperatur, max.: 155°C Produktbreite: 1.25mm |
на замовлення 9840 шт: термін постачання 21-31 дні (днів) |
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S29GL01GT11DHB023 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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S29GL01GT11DHB023 | Infineon Technologies |
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns Automotive AEC-Q100 64-Pin Fortified BGA Reel |
товар відсутній |
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| S29GL512S10DHA010 | Infineon Technologies |
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray |
товар відсутній |
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S29GL512S10DHA010 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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| S29GL512S10DHA020 | Infineon Technologies |
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray |
товар відсутній |
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S29GL512S10DHA020 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
| ERA6AEB222V |
|
Виробник: PANASONIC
Description: PANASONIC - ERA6AEB222V - Chipwiderstand, Oberflächenmontage, 2.2 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 2.2kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 0.1%
Temperaturkoeffizient: ± 25ppm/°C
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
Description: PANASONIC - ERA6AEB222V - Chipwiderstand, Oberflächenmontage, 2.2 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 2.2kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: ± 0.1%
Temperaturkoeffizient: ± 25ppm/°C
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
на замовлення 9840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 23.3 грн |
| 100+ | 8.55 грн |
| 500+ | 5.97 грн |
| 1000+ | 3.15 грн |
| 2500+ | 2.85 грн |
| S29GL01GT11DHB023 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
| S29GL01GT11DHB023 |
|
Виробник: Infineon Technologies
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns Automotive AEC-Q100 64-Pin Fortified BGA Reel
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns Automotive AEC-Q100 64-Pin Fortified BGA Reel
товар відсутній
| S29GL512S10DHA010 |
|
Виробник: Infineon Technologies
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray
товар відсутній
| S29GL512S10DHA010 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товар відсутній
| S29GL512S10DHA020 |
|
Виробник: Infineon Technologies
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns Automotive AEC-Q100 64-Pin Fortified BGA Tray
товар відсутній
| S29GL512S10DHA020 |
|
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
товар відсутній