Виробник: VARTA
Description: VARTA - 56650 764 098 - Akku, 51.2 V, Lithium-Eisenphosphat, 11.4 Ah, M8+ M6- mit Gewinde
tariffCode: 85076000
NEDA-Code: -
rohsCompliant: YES
Batterie-/Akkuspannung: 51.2V
Batteriekapazität: 11.4Ah
Batterie-/Akkutechnologie: Lithium-Eisenphosphat
hazardous: true
hazardCode: 3480
rohsPhthalatesCompliant: YES
usEccn: EAR99
Außenbreite: 137mm
Außentiefe: 209mm
euEccn: NLR
Batterie-/Akkugrößencode: -
Außendurchmesser: -
Menge pro Packung: 1
Außenhöhe: 185mm
Batterie-/Akkuanschlüsse: M8+ M6- mit Gewinde
Produktpalette: Easy Block 48 Series
productTraceability: No
IEC-Code Batterie/Akku: -
Gewicht: 7.5kg
SVHC: No SVHC (16-Jan-2020)

Виробник: TE Connectivity / AMP
D-Sub Contacts PIN 28-24 BR/AU

Виробник: TE Connectivity AMP Connectors
Description: CONN PIN 24-28AWG GOLD CRIMP
Packaging: Bulk
Contact Finish: Gold
Contact Termination: Crimp
Wire Gauge: 24-28 AWG
Type: Stamped
Pin or Socket: Pin
Contact Finish Thickness: 30.0µin (0.76µm)
Contact Material: Brass

Виробник: TE Connectivity AMP Connectors
Description: CONN PIN 24-28AWG GOLD CRIMP
Packaging: Bulk
Contact Finish: Gold
Contact Termination: Crimp
Wire Gauge: 24-28 AWG
Type: Stamped
Pin or Socket: Pin
Contact Finish Thickness: FLASH
Contact Material: Brass

Виробник: Molex
Description: CONN RCPT HSG 50POS 2.54MM
Packaging: Bulk
Connector Type: Receptacle
Contact Termination: Crimp
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 50
Pitch: 0.100" (2.54mm)
Operating Temperature: -40°C ~ 105°C
Contact Type: Female Socket
Row Spacing: 0.100" (2.54mm)
Insulation Material: Polyester, Glass Filled
Number of Rows: 2

Виробник: Molex
Headers & Wire Housings CGrid SL Hsg Opt F D Hsg Opt F DR 50Ckt

Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified

Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified

Виробник: VARTA MICROBATTERY
56650764099

Виробник: VARTA MICROBATTERY
56650764099

Виробник: VARTA MICROBATTERY
56650764098

Виробник: VARTA MICROBATTERY
56650764098

Виробник: Bel Fuse Inc.
Description: CONN JACK 1PORT 10G BASE-T
Packaging: Tray

Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified

Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified

Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified