Результат пошуку "567505" : 4
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 5052 | Wakefield-Vette |
 Heat Sinks Extrusion, 6 Foot Bar, Perimeter 31.02 Inch, Rev. B |
товар відсутній |
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| 52-CBSF-6.5X6.75X0.5 | LeaderTech |
EMI Gaskets, Sheets, Absorbers & Shielding 52-CBSF-6.5X6.75X0.5 |
товар відсутній |
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SI4800,518 | NXP Semiconductors |
Trans MOSFET N-CH 30V 9A 8-Pin SO T/R |
товар відсутній |
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SI4800,518 | NXP USA Inc. |
Description: MOSFET N-CH 30V 9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 5 V |
товар відсутній |
| 5052 |
|
Виробник: Wakefield-Vette
Heat Sinks Extrusion, 6 Foot Bar, Perimeter 31.02 Inch, Rev. B
Heat Sinks Extrusion, 6 Foot Bar, Perimeter 31.02 Inch, Rev. B
товар відсутній
| 52-CBSF-6.5X6.75X0.5 |
|
Виробник: LeaderTech
EMI Gaskets, Sheets, Absorbers & Shielding 52-CBSF-6.5X6.75X0.5
EMI Gaskets, Sheets, Absorbers & Shielding 52-CBSF-6.5X6.75X0.5
товар відсутній
| SI4800,518 |
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 5 V
Description: MOSFET N-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 5 V
товар відсутній