5KP160CA-B LITTELFUSE
Виробник: LITTELFUSECategory: Bidirectional THT transil diodes
Description: Diode: TVS; 187.5V; 19.7A; bidirectional; ±5%; P600; 5kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 160V
Breakdown voltage: 187.5V
Max. forward impulse current: 19.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис 5KP160CA-B LITTELFUSE
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 187.5V; 19.7A; bidirectional; ±5%; P600; 5kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 5kW, Max. off-state voltage: 160V, Breakdown voltage: 187.5V, Max. forward impulse current: 19.7A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 5KP160CA-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
5KP160CA-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 160VWM 259VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.7A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товар відсутній |
|
| 5KP160CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Axial |
товар відсутній |
||
|
|
5KP160CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.5V; 19.7A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 160V Breakdown voltage: 187.5V Max. forward impulse current: 19.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |