Технічний опис 5KP8.5CA-B Littelfuse
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 9.9V; 354.2A; bidirectional; ±5%; P600; 5kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 5kW, Max. off-state voltage: 8.5V, Breakdown voltage: 9.9V, Max. forward impulse current: 354.2A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 0.1mA, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 5KP8.5CA-B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
5KP8.5CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 9.9V; 354.2A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 354.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.1mA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
товар відсутній |
|
 |
5KP8.5CA-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 8.5VWM 14.4VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 354.2A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товар відсутній |
|
 |
5KP8.5CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Axial |
товар відсутній |
|
|
|
5KP8.5CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 9.9V; 354.2A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 354.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 0.1mA Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |