Технічний опис 5SNA0600G650100 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge x3, Max. off-state voltage: 6.5kV, Collector current: 600A, Case: HIPAK, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 1.2kA, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції 5SNA0600G650100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 5SNA 0600G650100 | Виробник : ABB |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 6.5kV Collector current: 600A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| 5SNA 0600G650100 | Виробник : ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 6.5kV Collector current: 600A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mechanical mounting: screw |
товар відсутній |