5SNA 1600N170100 ABB
Виробник: ABBCategory: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис 5SNA 1600N170100 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Type of module: IGBT, Semiconductor structure: common emitter; common gate; transistor/transistor, Topology: IGBT half-bridge x2, Max. off-state voltage: 1.7kV, Collector current: 1.6kA, Case: HIPAK, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 3.2kA, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції 5SNA 1600N170100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 5SNA 1600N170100 | Виробник : ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Mechanical mounting: screw |
товар відсутній |